收藏本站
Si4908DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
D u ty Cycle = 0.5
0.2
N otes:
0.1
0.1
0.05
P DM
t 1
t 1
0.01
0.02
Single P u lse
t 2
1. D u ty Cycle, D =
t 2
2. Per Unit Base = R thJA = 120 C/ W
3. T JM – T A = P DM Z thJA(t)
4. S u rface Mo u nted
10 -4
10 -3
10 -2
10 -1
1
1 0
100
6 0 0
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
D u ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P u lse
0.01
10 -4
10 -3
10 -2
10 -1
1
1 0
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73698 .
www.vishay.com
6
Document Number: 73698
S09-0540-Rev. B, 06-Apr-09
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4914BDY-T1-E3 MOSFET N-CH 30V 8-SOIC
SI4914DY-T1-E3 MOSFET DUAL N-CH 30V 8-SOIC
SI4916DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
SI4920DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
SI4932DY-T1-GE3 MOSFET N-CH DUAL 30V 8-SOIC
SI4933DY-T1-GE3 MOSFET P-CH DUAL 12V 8-SOIC
SI4936CDY-T1-E3 MOSFET 2N-CH 30V 5.8A SO8
SI4940DY-T1-GE3 MOSFET N-CH DUAL 40V 8-SOIC
相关代理商/技术参数
SI4909DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 40 V (D-S) MOSFET
SI4909DY-T1-GE3 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 40V 6.4A 8-Pin SOIC N T/R 制造商:Vishay Siliconix 功能描述:DUAL P-CHANNEL 40-V (D-S) MOSFET - Tape and Reel 制造商:Vishay Siliconix 功能描述:DUAL P-CHANNEL 40-V (D-S) MOSFET - Cut TR (SOS) 制造商:Vishay Siliconix 功能描述:MOSFET PP CH W/D DIOD 40V 8ASO8 制造商:Vishay Siliconix 功能描述:MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8 制造商:Vishay Siliconix 功能描述:MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:3.2W ;RoHS Compliant: Yes
SI4910DY 制造商:VAISH 制造商全称:VAISH 功能描述:N-Channel 40-V (D-S) MOSFET
SI4910DY-T1-E3 功能描述:MOSFET DUAL N-CH 40V(D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4910DY-T1-GE3 功能描述:MOSFET 40V 6.0A 3.1W 27mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4910-F-FT 功能描述:射频无线杂项 Digital Bias IC’s IA4910 RoHS:否 制造商:Texas Instruments 工作频率:112 kHz to 205 kHz 电源电压-最大:3.6 V 电源电压-最小:3 V 电源电流:8 mA 最大功率耗散: 工作温度范围:- 40 C to + 110 C 封装 / 箱体:VQFN-48 封装:Reel
SI4910-F-FTR 制造商:Silicon Laboratories Inc 功能描述:DIGITAL BIAS IC'S - IA4910 - Tape and Reel
SI4911DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET